A semiconductor device of the technology includes a first diffusion section (22), a second diffusion section (21), a channel section (23), a gate section (24), and a stress application section (31, 32, or 33). In a semiconductor layer (10) having a groove (10A), the first diffusion section (22) is formed at or in the vicinity of a bottom of the groove (10A), the second diffusion section (21) is formed at an upper end of the groove (10A), and the channel section (23) is formed between the first diffusion section (22) and the second diffusion section (21). The gate section (24) is buried in the groove (10A) at a position opposing the channel section (23). The stress application section (31, 32, or 33) applies one of compressive stress and tensile stress to the channel section (23) in a normal direction to the semiconductor layer (10).