Invention Grant
- Patent Title: Gate driver with reduced number of thin film transistors and display device including the same
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Application No.: US15378928Application Date: 2016-12-14
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Publication No.: US10276121B2Publication Date: 2019-04-30
- Inventor: Byunghoon Kim , Yongho Kim , Kwangsoo Kim , Seungchul Lee
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Polsinelli PC
- Priority: KR10-2015-0191131 20151231
- Main IPC: G09G3/36
- IPC: G09G3/36

Abstract:
In a gate driver, a Q node is shared by two channels to output a scan signal at high level, and a QB node is shared by four channels to output a scan signal at low level. Accordingly, the number of thin-film transistors required to configure four channels of a gate-in-panel (GIP) is reduced, such that the bezel size can be reduced. Further, the gate driver includes a compensation capacitor or a discharge transistor disposed in some of the channels sharing the Q node, such that deviation in output characteristics among the channels sharing the Q node can be reduced.
Public/Granted literature
- US20170193950A1 GATE DRIVER AND DISPLAY DEVICE INCLUDING THE SAME Public/Granted day:2017-07-06
Information query
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