Gate driver with reduced number of thin film transistors and display device including the same

    公开(公告)号:US10276121B2

    公开(公告)日:2019-04-30

    申请号:US15378928

    申请日:2016-12-14

    Abstract: In a gate driver, a Q node is shared by two channels to output a scan signal at high level, and a QB node is shared by four channels to output a scan signal at low level. Accordingly, the number of thin-film transistors required to configure four channels of a gate-in-panel (GIP) is reduced, such that the bezel size can be reduced. Further, the gate driver includes a compensation capacitor or a discharge transistor disposed in some of the channels sharing the Q node, such that deviation in output characteristics among the channels sharing the Q node can be reduced.

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