Invention Grant
- Patent Title: Resistive random access memory (RRAM) cell filament formation using current waveforms
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Application No.: US15597709Application Date: 2017-05-17
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Publication No.: US10276236B2Publication Date: 2019-04-30
- Inventor: Santosh Hariharan , Hieu Van Tran , Feng Zhou , Xian Liu , Steven Lemke , Nhan Do , Zhixian Chen , Xinpeng Wang
- Applicant: Silicon Storage Technology, Inc. , Agency For Science, Technology, and Research
- Applicant Address: US CA San Jose SG Connexis
- Assignee: Silicon Storage Technology, Inc.,Agency For Science, Technology, And Research
- Current Assignee: Silicon Storage Technology, Inc.,Agency For Science, Technology, And Research
- Current Assignee Address: US CA San Jose SG Connexis
- Agency: DLA Piper LLP (US)
- Priority: SG10201606137Y 20160726
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C11/00 ; H01L27/24 ; H01L45/00
Abstract:
A memory device includes a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and an electrical current source configured to apply one or more electrical current pulses through the metal oxide material. For each of the one or more electrical current pulses, an amplitude of the electrical current increases over time during the electrical current pulse to form a conductive filament in metal oxide material.
Public/Granted literature
- US20180033482A1 Current Forming Of Resistive Random Access Memory (RRAM) Cell Filament Public/Granted day:2018-02-01
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