Invention Grant
- Patent Title: Method for processing a semiconductor region and an electronic device
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Application No.: US15141855Application Date: 2016-04-29
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Publication No.: US10276362B2Publication Date: 2019-04-30
- Inventor: Evelyn Napetschnig , Sandra Wirtitsch , Mario Barusic , Aleksander Hinz , Robert Hartl , Georg Schinner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner MBB
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/324 ; H01L21/225 ; H01L21/306 ; H01L29/167
Abstract:
According to various embodiments, a method for processing a semiconductor region, wherein the semiconductor region comprises at least one precipitate, may include: forming a precipitate removal layer over the semiconductor region, wherein the precipitate removal layer may define an absorption temperature at which a chemical solubility of a constituent of the at least one precipitate is greater in the precipitate removal layer than in the semiconductor region; and heating the at least one precipitate above the absorption temperature.
Public/Granted literature
- US20170316934A1 METHOD FOR PROCESSING A SEMICONDUCTOR REGION AND AN ELECTRONIC DEVICE Public/Granted day:2017-11-02
Information query
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