公开(公告)号：US10276362B2

公开(公告)日：2019-04-30

申请号：US15141855

申请日：2016-04-29

Applicant: Infineon Technologies AG

Inventor： Evelyn Napetschnig ,  Sandra Wirtitsch ,  Mario Barusic ,  Aleksander Hinz ,  Robert Hartl ,  Georg Schinner

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/225 ,  H01L21/306 ,  H01L29/167

Abstract: According to various embodiments, a method for processing a semiconductor region, wherein the semiconductor region comprises at least one precipitate, may include: forming a precipitate removal layer over the semiconductor region, wherein the precipitate removal layer may define an absorption temperature at which a chemical solubility of a constituent of the at least one precipitate is greater in the precipitate removal layer than in the semiconductor region; and heating the at least one precipitate above the absorption temperature.