- 专利标题： Composite contact plug structure and method of making same
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申请号： US15860447申请日： 2018-01-02
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公开(公告)号： US10276432B2公开(公告)日： 2019-04-30
- 发明人: Yu-Hung Lin , Sheng-Hsuan Lin , Chih-Wei Chang , You-Hua Chou , Chia-Lin Hsu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/538 ; H01L23/532 ; H01L23/522 ; H01L23/485 ; H01L23/48 ; H01L21/285
摘要：
An embodiment contact plug includes a bilayer structure and a diffusion barrier layer on a sidewall and a bottom surface of the bilayer structure. The bilayer structure includes a conductive core and a conductive liner on a sidewall and a bottom surface of the conductive core. In the embodiment contact plug, the conductive liner comprises cobalt or ruthenium.
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