Invention Grant
- Patent Title: ICP source for M and W-shape discharge profile control
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Application No.: US15646072Application Date: 2017-07-10
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Publication No.: US10283329B2Publication Date: 2019-05-07
- Inventor: Anurag Kumar Mishra , James Rogers , John Poulose
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67 ; H01L21/3065

Abstract:
Apparatuses and methods are provided that, in some embodiments use an adjustable middle coil to tune plasma density in a plasma processing system. For example, in one embodiment, a plasma processing apparatus includes an impedance match circuit coupled to an Rf power source. The impedance match circuit measures voltage and current at an inner and an outer coil. The match circuit calculates plasma density from the measured voltage and/or current. An adjustable middle coil located between the inner and outer coils is adjusted and/or replaced to tune the plasma density radial profile.
Public/Granted literature
- US20190013186A1 ICP SOURCE FOR M AND W-SHAPE DISCHARGE PROFILE CONTROL Public/Granted day:2019-01-10
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