- 专利标题: Integrated circuit filler and method thereof
-
申请号: US15484628申请日: 2017-04-11
-
公开(公告)号: US10283496B2公开(公告)日: 2019-05-07
- 发明人: Tseng Chin Lo , Molly Chang , Ya-Wen Tseng , Chih-Ting Sun , Zi-Kuan Li , Bo-Sen Chang , Geng-He Lin
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L27/02 ; G06F17/50 ; H01L21/027 ; H01L21/8234 ; H01L21/66 ; H01L27/11
摘要:
Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.
公开/授权文献
- US20180006010A1 INTEGRATED CIRCUIT FILLER AND METHOD THEREOF 公开/授权日:2018-01-04
信息查询
IPC分类: