Invention Grant
- Patent Title: Floating diffusion of image sensor with low leakage current
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Application No.: US15972380Application Date: 2018-05-07
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Publication No.: US10283558B1Publication Date: 2019-05-07
- Inventor: Sohei Manabe , Keiji Mabuchi
- Applicant: OmniVision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Christensen O'Connor Johnson Kindness PLLC
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/359 ; H04N5/378

Abstract:
An image sensor including a photodiode, a floating diffusion region, a first, second, and third doped region of a semiconductor material, and a first capacitor is presented. The photodiode is disposed in the semiconductor material to generate image charge in response to incident light. The floating diffusion region is disposed in the semiconductor material proximate to the photodiode. The floating diffusion region is at least partially surrounded by the first doped region of the semiconductor material. The second doped region and the third doped region of the semiconductor material each have an opposite polarity of the floating diffusion region and the first doped region. The floating diffusion region and at least part of the first doped region are laterally disposed between the second doped region and the third doped region.
Information query
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