Invention Grant
- Patent Title: Silicon-based anode and method for manufacturing the same
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Application No.: US15401841Application Date: 2017-01-09
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Publication No.: US10283759B2Publication Date: 2019-05-07
- Inventor: Gleb Nikolayevich Yushin , Igor Luzinov , Bogdan Zdyrko , Alexandre Magasinski
- Applicant: CLEMSON UNIVERSITY RESEARCH FOUNDATION , GEORGIA TECH RESEARCH CORPORATION
- Applicant Address: US SC Clemson US GA Atlanta
- Assignee: Clemson University Research Foundation,Georgia Tech Research Corporation
- Current Assignee: Clemson University Research Foundation,Georgia Tech Research Corporation
- Current Assignee Address: US SC Clemson US GA Atlanta
- Agent Steven Driskill
- Main IPC: H01M4/1395
- IPC: H01M4/1395 ; H01M4/04 ; H01M4/62 ; H01M4/38 ; H01M4/36 ; H01M4/02

Abstract:
A silicon-based anode comprising silicon, a carbon coating that coats the surface of the silicon, a polyvinyl acid that binds to at least a portion of the silicon, and vinylene carbonate that seals the interface between the silicon and the polyvinyl acid. Because of its properties, polyvinyl acid binders offer improved anode stability, tunable properties, and many other attractive attributes for silicon-based anodes, which enable the anode to withstand silicon cycles of expansion and contraction during charging and discharging.
Public/Granted literature
- US20170117537A1 Silicon-Based Anode and Method for Manufacturing the Same Public/Granted day:2017-04-27
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