Invention Grant
- Patent Title: Utilization of backside silicidation to form dual side contacted capacitor
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Application No.: US15807169Application Date: 2017-11-08
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Publication No.: US10290579B2Publication Date: 2019-05-14
- Inventor: Sinan Goktepeli , Plamen Vassilev Kolev , Michael Andrew Stuber , Richard Hammond , Shiqun Gu , Steve Fanelli
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/528 ; H01L23/522 ; H01L23/532 ; H01L23/66 ; H01L27/12 ; H01L49/02 ; H01L29/06 ; H04B1/16 ; H01L29/66 ; H01L29/94
Abstract:
An integrated circuit structure may include a capacitor having a semiconductor layer as a first plate and a gate layer as a second plate. A capacitor dielectric layer may separate the first plate and the second plate. A backside metallization may be coupled to the first plate of the capacitor. A front-side metallization may be coupled to the second plate of the capacitor. The front-side metallization may be arranged distal from the backside metallization.
Public/Granted literature
- US20180076137A1 UTILIZATION OF BACKSIDE SILICIDATION TO FORM DUAL SIDE CONTACTED CAPACITOR Public/Granted day:2018-03-15
Information query
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