A semiconductor device has a 6T SRAM cell formed on a substrate. The SRAM cell includes a first and a second PMOS transistors formed over an N-well line in a substrate. A first and a second NMOS transistors are formed over a first P-well line in the substrate at a first side of the N-well line. A third and a fourth NMOS transistors are formed over a second P-well line in the substrate at a second side of the N-well line. A first gate line connects gates of the first PMOS transistor and the first NMOS transistor. A second gate line connects a gate of the second NMOS transistor. A third gate line connects gates of the second PMOS transistor and the third NMOS transistor. A fourth gate line connects a gate of the fourth NMOS transistor. The first gate line and the third gate line are in L-shape.