Invention Grant
- Patent Title: Aluminum nitride (AlN) devices with infrared absorption structural layer
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Application No.: US15291599Application Date: 2016-10-12
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Publication No.: US10294097B2Publication Date: 2019-05-21
- Inventor: Julius Ming-Lin Tsai , Michael J. Daneman
- Applicant: INVENSENSE, INC.
- Applicant Address: US CA San Jose
- Assignee: INVENSENSE, INC.
- Current Assignee: INVENSENSE, INC.
- Current Assignee Address: US CA San Jose
- Agency: Amin, Turocy & Watson, LLP
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81B7/00 ; B81C1/00

Abstract:
A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.
Public/Granted literature
- US20170022054A1 ALUMINUM NITRIDE (AlN) DEVICES WITH INFRARED ABSORPTION STRUCTURAL LAYER Public/Granted day:2017-01-26
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