发明授权
- 专利标题： Method and apparatus for fabricating wafer by calculating process correction parameters
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申请号： US15358716申请日： 2016-11-22
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公开(公告)号： US10295914B2公开(公告)日： 2019-05-21
- 发明人: Boris Habets
- 申请人： Boris Habets
- 申请人地址： DE Dresden
- 专利权人： Qoniac GmbH
- 当前专利权人： Qoniac GmbH
- 当前专利权人地址： DE Dresden
- 代理机构： 24IP Law Group USA, PLLC
- 代理商 Timothy Dewitt
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; H01L21/66 ; G05B17/02
摘要：
A method of calculating an overlay correction model in a unit for the fabrication of a wafer is disclosed. The method comprises measuring overlay deviations of a subset of first overlay marks and second overlay marks by determining the differences between the subset of first overlay marks generated in the first layer and corresponding ones of the subset of second overlay marks generated in the second layer.
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