Invention Grant
- Patent Title: Integrated circuit electrostatic discharge protection
-
Application No.: US15132563Application Date: 2016-04-19
-
Publication No.: US10298215B2Publication Date: 2019-05-21
- Inventor: Wei Gao , Yi Lu , Handoko Linewih
- Applicant: Globalfoundries Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Lorenz & Kopf, LLP
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H03K5/08 ; H01L27/02

Abstract:
Integrated circuits (ICs) include electrostatic discharge protection including a transistor having a drain operably coupled to a first rail of the integrated circuit and a source operatively coupled to a second rail of the integrated circuit. A voltage regulating trigger circuit is operatively coupled to the first rail and to a gate of the transistor to turn on of the transistor responsive to an ESD event affecting the integrated circuit, wherein the voltage regulating trigger circuit limits a potential of the first rail to a first potential and a gate potential of the transistor to a second potential, less than the first potential but sufficient to turn the transistor on to conduct current arising from the ESD event from the first rail to the second rail.
Public/Granted literature
- US20170302066A1 INTEGRATED CIRCUIT ELECTROSTATIC DISCHARGE PROTECTION Public/Granted day:2017-10-19
Information query