Invention Grant
- Patent Title: Terminal device including reference voltage circuit
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Application No.: US15870252Application Date: 2018-01-12
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Publication No.: US10303197B2Publication Date: 2019-05-28
- Inventor: Seung-hyun Oh , Woo-jin Jang , Jong-woo Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2017-0091601 20170719
- Main IPC: G05F3/26
- IPC: G05F3/26 ; H04B1/40 ; A61B5/00

Abstract:
A reference voltage circuit is provided. The reference voltage circuit includes a first current bias circuit including a first node; a second current bias circuit including a plurality of NMOS transistors and a second node, and an amplifier configured to output a reference voltage having same value as the second voltage. The plurality of NMOS transistors include a first NMOS transistor and a second NMOS transistor, the first NMOS transistor is connected to the first node, and the plurality of NMOS transistors are connected to the second node and configured to perform a sub-threshold operation based on a first voltage of the first node so that a second voltage is generated at the second node.
Public/Granted literature
- US20190025867A1 TERMINAL DEVICE INCLUDING REFERENCE VOLTAGE CIRCUIT Public/Granted day:2019-01-24
Information query
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