Apparatus include controllers configured to iteratively program a group of memory cells to respective desired data states; determine whether a power loss to the apparatus is indicated while iteratively programming the group of memory cells; and if a power loss to the apparatus is indicated, to change the desired data state of the particular memory cell before continuing with the programming. Apparatus further include controllers configured to read a particular memory cell of a last written page of memory cells, determine whether a threshold voltage of the particular memory cell is less than a particular voltage level, and to mark the last written page of memory cells as affected by power loss during a programming operation of the last written page of memory cells when the threshold voltage of the particular memory cell is determined to be higher than the particular voltage level.