Invention Grant
- Patent Title: Apparatuses and methods including memory access in cross point memory
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Application No.: US16198347Application Date: 2018-11-21
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Publication No.: US10304534B2Publication Date: 2019-05-28
- Inventor: DerChang Kau , Gianpaolo Spadini
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; H01L45/00 ; G11C16/08 ; H01L27/24 ; G11C16/24 ; H01L23/528
Abstract:
Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
Public/Granted literature
- US20190096484A1 APPARATUSES AND METHODS INCLUDING MEMORY ACCESS IN CROSS POINT MEMORY Public/Granted day:2019-03-28
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