Invention Grant
- Patent Title: Erase speed based word line control
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Application No.: US15194295Application Date: 2016-06-27
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Publication No.: US10304551B2Publication Date: 2019-05-28
- Inventor: Biswajit Ray , Mohan Dunga , Gerrit Jan Hemink , Changyuan Chen
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: Kunzler Bean & Adamson, PC
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/34 ; G11C16/04 ; G11C16/08 ; G11C16/16

Abstract:
Apparatuses, systems, methods, and computer program products are disclosed for erase depth control. One apparatus includes a block of non-volatile storage cells. A controller is configured to perform a first erase operation on a block of non-volatile storage cells. A controller for a block is configured to determine a first set of storage cells of the block having a faster erase speed than a second set of storage cells of the block based on a verify voltage threshold. A controller for a block is configured to perform a second erase operation on the block using different voltages for a first set of storage cells and a second set of storage cells of the block.
Public/Granted literature
- US20170372789A1 ERASE SPEED BASED WORD LINE CONTROL Public/Granted day:2017-12-28
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