Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
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Application No.: US15046781Application Date: 2016-02-18
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Publication No.: US10304704B2Publication Date: 2019-05-28
- Inventor: Katsuhiro Sato , Junichi Igarashi , Yoshihiro Ogawa
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-167037 20150826
- Main IPC: F26B5/14
- IPC: F26B5/14 ; H01L21/67 ; H01L21/02
Abstract:
A substrate processing method according to an embodiment is a substrate processing method for drying a substrate. The substrate processing method includes supplying a solution in which a sublimation material is dissolved in a first solvent to a surface of a cleaned substrate. The substrate processing method includes eliminating at least a portion of association states of the sublimation material. The substrate processing method includes precipitating the sublimation material on the surface of the substrate. The substrate processing method includes removing the precipitated sublimation material by sublimation.
Public/Granted literature
- US20170062244A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2017-03-02
Information query
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