A semiconductor device includes a cell region that includes a first active region and a second active region extending in a first direction and a separation region between the first active region and the second active region. The cell region has a first width. A first gate structure and a second gate structure are disposed on the cell region, are spaced apart from each other in the first direction, and extend in the second direction. A first metal line and a second metal line are disposed on the cell region, extend in the first direction, and are spaced apart from each other by a first pitch. Each of the first and second metal lines has a second width. A first gate contact electrically connects the first gate structure and the first metal line. At least a portion of the first gate contact overlaps the separation region. A second gate contact electrically connects the second gate structure and the second metal line. At least a portion of the second gate contact overlaps the separation region. The first width divided by a sum of the first pitch and the second width is six or less.