公开(公告)号：US11705520B2

公开(公告)日：2023-07-18

申请号：US17657761

申请日：2022-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Jin Kim ,  Dong Woo Kim ,  Sang Moon Lee ,  Seung Hun Lee

IPC: H01L29/78 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/786 ,  H01L27/092 ,  H01L29/06

CPC classification number: H01L29/7848 ,  H01L21/76829 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/7851 ,  H01L29/78696 ,  H01L29/0653

Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.

公开(公告)号：US11322614B2

公开(公告)日：2022-05-03

申请号：US16934240

申请日：2020-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Jin Kim ,  Dong Woo Kim ,  Sang Moon Lee ,  Seung Hun Lee

IPC: H01L29/78 ,  H01L21/768 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/786

Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.

公开(公告)号：US11195952B2

公开(公告)日：2021-12-07

申请号：US16402292

申请日：2019-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Min Kim ,  Hyo Jin Kim ,  Dae Won Ha

IPC: H01L29/78 ,  H01L21/762

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure including a stress structure and a semiconductor region that are sequentially stacked on a substrate. The semiconductor device includes a field insulation layer on a portion of the fin structure. The semiconductor device includes a gate electrode on the fin structure. Moreover, the stress structure includes an oxide.

公开(公告)号：US10121791B2

公开(公告)日：2018-11-06

申请号：US15819309

申请日：2017-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Kwan Yu ,  Hyo Jin Kim ,  Dong Suk Shin ,  Ji Hye Yi ,  Ryong Ha

IPC: H01L29/08 ,  H01L29/66 ,  H01L27/092 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device includes a substrate, first through fourth gate electrodes, and first through fifth fin active pattern. A first recess which is formed in the substrate between the first and second gate electrodes intersecting the second fin active pattern, is filled with a first source/drain region, and has a first depth in a third direction perpendicular to the first and second directions. A second recess which is formed in the substrate between the third and fourth gate electrodes intersecting the second fin active pattern, is filled with a second source/drain region, and has a second depth in the third direction. A third recess which is formed in the substrate between the second and third gate electrodes intersecting the second fin active pattern, is filled with a third source/drain region, and has a third depth in the third direction. The third depth is greater than the first and second depths.

公开(公告)号：US20240413206A1

公开(公告)日：2024-12-12

申请号：US18409559

申请日：2024-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Jun Nam ,  Jin Bum Kim ,  Sang Moon Lee ,  Gyeom Kim ,  Hyo Jin Kim ,  Tae Hyung Lee ,  In Geon Hwang

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device includes: a substrate, an active pattern extending in a first horizontal direction on the substrate, a plurality of nanosheets spaced apart from each other and stacked in a vertical direction on the active pattern, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the active pattern, the gate electrode surrounding the plurality of nanosheets, a source/drain region disposed on at least one side of the gate electrode on the active pattern, the source/drain region including a first layer doped with a metal, and a second layer disposed on the first layer, and an inner spacer disposed between the gate electrode and the first layer, between each of the plurality of nanosheets, the inner spacer in contact with the first layer, the inner spacer including a metal oxide formed by oxidizing the same material as the metal.

公开(公告)号：US11635215B2

公开(公告)日：2023-04-25

申请号：US16657132

申请日：2019-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Chul Lee ,  Jeong Uk Koh ,  Yong Sam Kwon ,  Hyo Jin Kim ,  Seong Jin Cho

IPC: F24F1/56 ,  H05K5/03 ,  H05K5/02

Abstract: Disclosed is an air conditioner including a first frame including a through hole, a second frame rotatably coupleable to the first frame, the second frame including a burring portion at least a portion of which is insertable into the through-hole in a first direction, where while the burring portion is inserted into the through-hole of the first frame, the burring portion protrudes in the first direction, and a burring hole formed by the burring portion, and a fastening member insertable into the burring hole in a second direction opposite to the first direction and configured to function as a rotary shaft of the second frame, where while the fastening member is inserted into the burring hole, the fastening member protrudes in the second direction.

公开(公告)号：US20200083377A1

公开(公告)日：2020-03-12

申请号：US16402292

申请日：2019-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Min Kim ,  Hyo Jin Kim ,  Dae Won Ha

IPC: H01L29/78 ,  H01L21/762

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure including a stress structure and a semiconductor region that are sequentially stacked on a substrate. The semiconductor device includes a field insulation layer on a portion of the fin structure. The semiconductor device includes a gate electrode on the fin structure. Moreover, the stress structure includes an oxide.

公开(公告)号：US20190393347A1

公开(公告)日：2019-12-26

申请号：US16213186

申请日：2018-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONG WOO KIM ,  Do Hee Kim ,  Hyo Jin Kim ,  Kang Hun Moon ,  Si Hyung Lee

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/45 ,  H01L29/36 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/762 ,  H01L29/66 ,  H01L21/306 ,  H01L21/02

Abstract: A semiconductor device includes a plurality of active fins on a substrate, a gate electrode intersecting the plurality of active fins, and a source/drain region on the plurality of active fins, extending on a first side and a second side of the gate electrode. The source/drain region includes lower epitaxial layers on ones of the plurality of active fins. The lower epitaxial layers include germanium (Ge) having a first concentration. An upper epitaxial layer is on the lower epitaxial layers, and includes germanium (Ge) having a second concentration that is higher than the first concentration. The lower epitaxial layers have convex upper surfaces, and are connected to each other between the active fins.

公开(公告)号：US20180211959A1

公开(公告)日：2018-07-26

申请号：US15819309

申请日：2017-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Kwan Yu ,  Hyo Jin Kim ,  Dong Suk Shin ,  Ji Hye Yi ,  Ryong Ha

IPC: H01L27/092

CPC classification number: H01L27/0924 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/0869 ,  H01L29/0886 ,  H01L29/4238 ,  H01L29/66484 ,  H01L29/66636

Abstract: A semiconductor device includes a substrate, first through fourth gate electrodes, and first through fifth fin active pattern. A first recess which is formed in the substrate between the first and second gate electrodes intersecting the second fin active pattern, is filled with a first source/drain region, and has a first depth in a third direction perpendicular to the first and second directions. A second recess which is formed in the substrate between the third and fourth gate electrodes intersecting the second fin active pattern, is filled with a second source/drain region, and has a second depth in the third direction. A third recess which is formed in the substrate between the second and third gate electrodes intersecting the second fin active pattern, is filled with a third source/drain region, and has a third depth in the third direction. The third depth is greater than the first and second depths.

公开(公告)号：US11929367B2

公开(公告)日：2024-03-12

申请号：US17977031

申请日：2022-10-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Seok Ha ,  Hyun Seung Song ,  Hyo Jin Kim ,  Kyoung Mi Park ,  Guk Il An

IPC: H01L21/00 ,  H01L21/308 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/3086 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.