- 专利标题: Tunable film bulk acoustic resonators and filters
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申请号: US14756018申请日: 2015-07-22
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公开(公告)号: US10312882B2公开(公告)日: 2019-06-04
- 发明人: Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
- 申请人: Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
- 主分类号: H03H3/04
- IPC分类号: H03H3/04 ; H03H9/00 ; H03H9/02 ; H03H9/17 ; H03H9/56 ; H03H9/58 ; H01P1/201
摘要:
In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies. A plurality of the present TFBARs are connected into a tunable oscillator or a tunable and selectable microwave filter for selecting and adjusting of the bandpass frequency by varying the biasing voltages.
公开/授权文献
- US20170025596A1 Tunable film bulk acoustic resonators and filters 公开/授权日:2017-01-26
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