Methods and scatterometry overlay metrology tools are provided, which scan a wafer region, perform focus measurements during the scanning to extract therefrom phase information, and derive depth data of the scanned wafer region from the extracted phase information. The depth information, relating to a dimension perpendicular to the wafer, may be derived along lines or surfaces, providing profilometry and surface data, respectively. The depth data may be used to locate metrology targets, as well as to provide material properties concerning wafer layers, to estimate process variation and to improve the overlay measurements.