公开(公告)号：US20180245910A1

公开(公告)日：2018-08-30

申请号：US15281175

申请日：2016-09-30

Applicant: KLA-Tencor Corporation

Inventor： Vincent Sebastian Immer ,  Naomi Ittah ,  Tal Marciano

IPC: G01B11/24 ,  G01B11/22

CPC classification number: G01B11/24 ,  G01B11/22 ,  G03F7/70633 ,  H01L22/12

Abstract: Methods and scatterometry overlay metrology tools are provided, which scan a wafer region, perform focus measurements during the scanning to extract therefrom phase information, and derive depth data of the scanned wafer region from the extracted phase information. The depth information, relating to a dimension perpendicular to the wafer, may be derived along lines or surfaces, providing profilometry and surface data, respectively. The depth data may be used to locate metrology targets, as well as to provide material properties concerning wafer layers, to estimate process variation and to improve the overlay measurements.

公开(公告)号：US10317198B2

公开(公告)日：2019-06-11

申请号：US15281175

申请日：2016-09-30

Applicant: KLA-Tencor Corporation

Inventor： Vincent Sebastian Immer ,  Naomi Ittah ,  Tal Marciano

IPC: G01B11/24 ,  H01L21/66 ,  G01B11/22 ,  G03F7/20

Abstract: Methods and scatterometry overlay metrology tools are provided, which scan a wafer region, perform focus measurements during the scanning to extract therefrom phase information, and derive depth data of the scanned wafer region from the extracted phase information. The depth information, relating to a dimension perpendicular to the wafer, may be derived along lines or surfaces, providing profilometry and surface data, respectively. The depth data may be used to locate metrology targets, as well as to provide material properties concerning wafer layers, to estimate process variation and to improve the overlay measurements.

公开(公告)号：US20180301385A1

公开(公告)日：2018-10-18

申请号：US15576811

申请日：2017-10-24

Applicant: KLA-Tencor Corporation

Inventor： Naomi Ittah ,  Nadav Gutman ,  Eran Amit ,  Vincent Immer ,  Einat Peled

IPC: H01L21/66 ,  G01B11/14 ,  G01B11/26 ,  H01L21/67

Abstract: A method of overlay control in silicon wafer manufacturing comprises firstly locating a target comprising a diffraction grating on a wafer layer; and then measuring the alignment of patterns in successive layers of the wafer. The location of the target may be done by the pupil camera rather than a vision camera by scanning the target to obtain pupil images at different locations along a first axis. The pupil images may comprise a first order diffraction pattern for each location. A measurement of signal intensity in the first order diffraction pattern is then obtained for each location. The variation of signal intensity with location along each axis is then analyzed to calculate the location of a feature in the target.