Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15965900Application Date: 2018-04-28
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Publication No.: US10317769B2Publication Date: 2019-06-11
- Inventor: Shinichi Watanuki , Yasutaka Nakashiba , Masaru Wakabayashi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2017-102657 20170524
- Main IPC: G02F1/225
- IPC: G02F1/225 ; G02F1/21

Abstract:
In a semiconductor device connected to a first optical waveguide, a phase modulation unit, and a second optical waveguide in this order and having an optical modulator guiding light in a first direction, the phase modulation unit includes: a semiconductor layer whose length in the first direction is larger than a width in a second direction orthogonal to the first direction and which is made of monocrystalline silicon; a core part serving as an optical waveguide region formed on the semiconductor layer, and extending in the first direction; a pair of slab parts arranged on both sides of the core part in the second direction; a first electrode coupled with one of the slab parts; and a second electrode coupled with the other of the slab parts. The core part has a p type semiconductor region and an n type semiconductor region extending in the first direction, and the second direction coincides with a crystal orientation of the semiconductor layer.
Public/Granted literature
- US20180341165A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-11-29
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