Invention Grant
- Patent Title: High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
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Application No.: US14469573Application Date: 2014-08-26
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Publication No.: US10325800B2Publication Date: 2019-06-18
- Inventor: Prashant Kulshreshtha , Kwangduk Douglas Lee , Bok Hoen Kim , Zheng John Ye , Swayambhu Prasad Behera , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Jian J. Chen
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/687
- IPC: H01L21/687 ; H01L21/683
Abstract:
Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.
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