公开(公告)号：US11276562B2

公开(公告)日：2022-03-15

申请号：US16807156

申请日：2020-03-02

申请人： Applied Materials, Inc.

发明人： Zheng John Ye ,  Ganesh Balasubramanian ,  Thuy Britcher ,  Jay D. Pinson, II ,  Hiroji Hanawa ,  Juan Carlos Rocha-Alvarez ,  Kwangduk Douglas Lee ,  Martin Jay Seamons ,  Bok Hoen Kim ,  Sungwon Ha

IPC分类号： H01L21/00 ,  C23C16/00 ,  H01J37/32 ,  C23C16/509

摘要： A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

公开(公告)号：US10418243B2

公开(公告)日：2019-09-17

申请号：US15233351

申请日：2016-08-10

申请人： Applied Materials, Inc.

发明人： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

摘要： Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US10373822B2

公开(公告)日：2019-08-06

申请号：US15816520

申请日：2017-11-17

申请人： Applied Materials, Inc.

发明人： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/033 ,  H01L21/66 ,  C23C16/26 ,  C23C16/04 ,  H01L21/311

摘要： Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US09490116B2

公开(公告)日：2016-11-08

申请号：US14879043

申请日：2015-10-08

申请人： Applied Materials, Inc.

发明人： Michael Tsiang ,  Praket P. Jha ,  Xinhai Han ,  Nagarajan Rajagopalan ,  Bok Hoen Kim ,  Tsutomu Kiyohara ,  Subbalakshmi Sreekala

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L27/115

CPC分类号： H01L21/0217 ,  H01L21/02274 ,  H01L27/11582

摘要： Embodiments of the disclosure provide methods and system for manufacturing film layers with minimum lithographic overlay errors on a semiconductor substrate. In one embodiment, a method for forming a film layer on a substrate includes supplying a deposition gas mixture including a silicon containing gas and a reacting gas onto a substrate disposed on a substrate support in a processing chamber, forming a plasma in the presence of the depositing gas mixture in the processing chamber, applying current to a plasma profile modulator disposed in the processing chamber while supplying the depositing gas mixture into the processing chamber, and rotating the substrate while depositing a film layer on the substrate.

摘要翻译： 本公开的实施例提供了在半导体衬底上制造具有最小光刻重叠误差的膜层的方法和系统。 在一个实施例中，用于在衬底上形成膜层的方法包括将包含含硅气体和反应气体的沉积气体混合物供给到设置在处理室中的衬底支撑体上的衬底上，在存在 在处理室中沉积气体混合物，将电流施加到设置在处理室中的等离子体轮廓调制器，同时将沉积气体混合物供应到处理室中，并且在衬底上沉积膜层的同时旋转衬底。

公开(公告)号：US09390910B2

公开(公告)日：2016-07-12

申请号：US14549380

申请日：2014-11-20

申请人： Applied Materials, Inc.

发明人： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC分类号： H01L21/443 ,  H01L21/02 ,  H01L21/66 ,  H01L21/033 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC分类号： H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

摘要： Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

摘要翻译： 用于调制一个或多个图案化膜的局部应力和覆盖误差的方法可以包括调节引入室主体的气体的气流分布，将腔体内的气体朝向衬底流动，旋转衬底， 通过使用双区加热器控制基板温度，来实现基板的边缘温度分布。 用于沉积膜的室可以包括包括一个或多个处理区域的室主体。 腔室主体可以包括气体分配组件，其具有用于将气体输送到一个或多个处理区域中的阻挡板。 阻挡板可以具有第一区域和第二区域，并且第一区域和第二区域各自可以具有多个孔。 腔体可以具有双区加热器。

公开(公告)号：US08993454B2

公开(公告)日：2015-03-31

申请号：US14028025

申请日：2013-09-16

申请人： Applied Materials, Inc.

发明人： Martin Jay Seamons ,  Sudha Rathi ,  Kwangduk Douglas Lee ,  Deenesh Padhi ,  Bok Hoen Kim ,  Chiu Chan

IPC分类号： H01L21/64 ,  C23C16/02 ,  C23C16/26 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01L21/64 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31144

摘要： Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a boron-containing amorphous carbon film is disclosed. The boron-containing amorphous carbon film comprises from about 10 to 60 atomic percentage of boron, from about 20 to about 50 atomic percentage of carbon, and from about 10 to about 30 atomic percentage of hydrogen.

摘要翻译： 本发明的实施例一般涉及集成电路的制造，特别涉及在半导体衬底上沉积含硼无定形碳层。 在一个实施方案中，公开了含硼无定形碳膜。 含硼无定形碳膜包含约10至60原子百分数的硼，约20至约50原子百分比的碳和约10至约30原子百分比的氢。

公开(公告)号：US11898249B2

公开(公告)日：2024-02-13

申请号：US18108989

申请日：2023-02-13

申请人： Applied Materials, Inc.

发明人： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward W. Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC分类号： C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

CPC分类号： C23C16/52 ,  C23C16/458 ,  C23C16/4557 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687 ,  G01N2201/1222

摘要： A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US11728168B2

公开(公告)日：2023-08-15

申请号：US17220441

申请日：2021-04-01

申请人： Applied Materials, Inc.

发明人： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC分类号： H01L21/00 ,  H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

CPC分类号： H01L21/0338 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3065

摘要： Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US11365476B2

公开(公告)日：2022-06-21

申请号：US16269337

申请日：2019-02-06

申请人： Applied Materials, Inc.

发明人： Praket P. Jha ,  Allen Ko ,  Xinhai Han ,  Thomas Jongwan Kwon ,  Bok Hoen Kim ,  Byung Ho Kil ,  Ryeun Kim ,  Sang Hyuk Kim

IPC分类号： H01L27/11556 ,  C23C16/34 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/311 ,  H01L27/11582

摘要： The present disclosure generally relate to thin films incorporating high aspect ratio feature definitions and methods for forming the same. As gate height increases, 3D NAND gate stacks are subject to higher aspect ratio etching. Due to the current limitations of etching techniques, the vertical etch profile typically tapers as the depth into the gate stack increases. The inventors have devised a unique deposition scheme that compensates for etch performance degradation in deep trenches by a novel plasma-enhanced chemical vapor deposition (PECVD) film deposition method. The inventors have found that by grading various properties (e.g., refractive index, stress of the film, dopant concentration in the film) of the as-deposited films (e.g., silicon nitride) a more uniform etch profile can be achieved by compensating for variations in both dry and wet etch rates.

公开(公告)号：US10325800B2

公开(公告)日：2019-06-18

申请号：US14469573

申请日：2014-08-26

申请人： Applied Materials, Inc.

发明人： Prashant Kulshreshtha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim ,  Zheng John Ye ,  Swayambhu Prasad Behera ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Jian J. Chen

IPC分类号： H01L21/687 ,  H01L21/683

摘要： Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.