Invention Grant
- Patent Title: Post gate silicon germanium channel condensation and method for producing the same
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Application No.: US16026820Application Date: 2018-07-03
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Publication No.: US10326007B2Publication Date: 2019-06-18
- Inventor: George Robert Mulfinger , Ryan Sporer , Timothy J. McArdle , Judson Robert Holt
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner P. C.
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/66 ; H01L21/84 ; H01L21/225 ; H01L21/02 ; H01L29/08 ; H01L29/78 ; H01L29/10 ; H01L27/12 ; H01L21/8238 ; H01L27/092

Abstract:
Methods of forming a graded SiGe percentage PFET channel in a FinFET or FDSOI device by post gate thermal condensation and oxidation of a high Ge percentage channel layer and the resulting devices are provided. Embodiments include forming a gate dielectric layer over a plurality of Si fins; forming a gate over each fin; forming a HM and spacer layer over and on sidewalls of each gate; forming a cavity in each fin adjacent to the gate and spacer layer; epitaxially growing an un-doped high percentage SiGe layer in each cavity and along sidewalls of each fin; thermally condensing the high percentage SiGe layer, an un-doped low percentage SiGe formed underneath in the substrate and fins; and forming a S/D region over the high percentage SiGe layer in each u-shaped cavity, an upper surface of the S/D regions below the gate dielectric layer.
Public/Granted literature
- US20190043967A1 POST GATE SILICON GERMANIUM CHANNEL CONDENSATION AND METHOD FOR PRODUCING THE SAME Public/Granted day:2019-02-07
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