Invention Grant
- Patent Title: Copper-silver dual-component metal electroplating solution and electroplating method for semiconductor wire
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Application No.: US15801496Application Date: 2017-11-02
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Publication No.: US10329681B2Publication Date: 2019-06-25
- Inventor: Chi-Haw Chiang , Liang-Huei Jiang , Ren-Ruey Fang , Chien-Liang Chang , Yu-Ping Wang , Ming-Ta Hsieh
- Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: TW
- Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: TW
- Agency: Schmeiser, Olsen & Watts, LLP
- Main IPC: C25D3/58
- IPC: C25D3/58 ; C25D3/64 ; H01L21/768

Abstract:
A copper-silver dual-component metal electroplating solution includes copper methanesulfonate, silver methanesulfonate, methanesulfonic acid, chlorine ions, and water. An electroplating method for forming a copper-silver dual-component metal by using such an electroplating solution, the steps of which includes (a) contacting the copper-silver dual-component metal electroplating solution with a substrate; (b) applying an operating voltage, the current density of which is controlled to be between 0.1 and 2 ASD in order to carry out electroplating on the substrate. Therefore, the electroplating solution has environmental characteristics, such as less poisoning hazards, through the design of methanesulfonic acid and methanesulfonate electroplating solution. Also, the potential and the current are adjusted during the electroplating in order to obtain a copper-silver dual-component metal plating layer with a specific silver content.
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