Invention Grant
- Patent Title: Semiconductor device with field effect transistor
-
Application No.: US15828728Application Date: 2017-12-01
-
Publication No.: US10332780B2Publication Date: 2019-06-25
- Inventor: Sunki Min , Songe Kim , Koungmin Ryu , Je-Min Yoo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2017-0008216 20170117
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762 ; H01L27/092 ; H01L29/423 ; H01L29/786 ; H01L21/8238 ; H01L29/06
Abstract:
A semiconductor device includes a substrate having a first active pattern and a second active pattern, the first active pattern including a first recess region dividing an upper portion thereof into a first portion and a second portion, the second active pattern including a second recess region dividing an upper portion thereof into a first portion and a second portion, a first insulating pattern covering an inner sidewall of the first recess region, and a second insulating pattern covering an inner sidewall of the second recess region. The first insulating pattern and the second insulating pattern include the same insulating material, and a volume fraction of the first insulating pattern with respect to a volume of the first recess region is smaller than a volume fraction of the second insulating pattern with respect to a volume of the second recess region.
Public/Granted literature
- US20180204762A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-07-19
Information query
IPC分类:
