公开(公告)号：US10141312B2

公开(公告)日：2018-11-27

申请号：US15296703

申请日：2016-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Jin Jeon ,  Young-Gun Ko ,  Gi-Gwan Park ,  Je-Min Yoo

IPC: H01L27/092 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78 ,  H01L29/08 ,  H01L29/165 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238

Abstract: Semiconductor devices are provided. A semiconductor device includes a first insulating material in a first fin. The semiconductor device includes a second insulating material in a second fin. The first and second insulating materials have different respective sizes. For example, in some embodiments, the first and second insulating materials have different respective widths and/or depths in the first and second fins, respectively.

公开(公告)号：US20170110456A1

公开(公告)日：2017-04-20

申请号：US15296703

申请日：2016-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Jin Jeon ,  Young-Gun Ko ,  Gi-Gwan Park ,  Je-Min Yoo

IPC: H01L27/092 ,  H01L29/165 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L27/02

CPC classification number: H01L27/0924 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/7846 ,  H01L29/7848

Abstract: Semiconductor devices are provided. A semiconductor device includes a first insulating material in a first fin. The semiconductor device includes a second insulating material in a second fin. The first and second insulating materials have different respective sizes. For example, in some embodiments, the first and second insulating materials have different respective widths and/or depths in the first and second fins, respectively.

公开(公告)号：US10332780B2

公开(公告)日：2019-06-25

申请号：US15828728

申请日：2017-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunki Min ,  Songe Kim ,  Koungmin Ryu ,  Je-Min Yoo

IPC: H01L29/78 ,  H01L21/762 ,  H01L27/092 ,  H01L29/423 ,  H01L29/786 ,  H01L21/8238 ,  H01L29/06

Abstract: A semiconductor device includes a substrate having a first active pattern and a second active pattern, the first active pattern including a first recess region dividing an upper portion thereof into a first portion and a second portion, the second active pattern including a second recess region dividing an upper portion thereof into a first portion and a second portion, a first insulating pattern covering an inner sidewall of the first recess region, and a second insulating pattern covering an inner sidewall of the second recess region. The first insulating pattern and the second insulating pattern include the same insulating material, and a volume fraction of the first insulating pattern with respect to a volume of the first recess region is smaller than a volume fraction of the second insulating pattern with respect to a volume of the second recess region.

公开(公告)号：US10128243B2

公开(公告)日：2018-11-13

申请号：US14955107

申请日：2015-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je-Min Yoo ,  Sangyoon Kim ,  Woosik Kim ,  Jongmil Youn ,  Hwasung Rhee ,  Heedon Jeong

IPC: H01L27/092 ,  H01L27/02 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate with a NMOS region and a PMOS region, a device isolation layer on the substrate to define active fins, and gate patterns on the substrate to have a length direction crossing the active fins, wherein the device isolation layer includes diffusion brake regions between respective pairs of the active fins, the diffusion brake regions being disposed adjacent to each other in a width direction of the gate patterns, and wherein a width of the diffusion brake region in the NMOS region is different from a width of the diffusion brake region in the PMOS region.