Invention Grant
- Patent Title: Method for manufacturing a semiconductor device
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Application No.: US15619595Application Date: 2017-06-12
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Publication No.: US10332786B2Publication Date: 2019-06-25
- Inventor: Wen-Che Tsai , Min-Yann Hsieh , Hua-Feng Chen , Kuo-Hua Pan
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/28 ; H01L21/283
Abstract:
A method for manufacturing a semiconductor device includes forming a gate stack over a substrate; forming an interlayer dielectric over the substrate to cover the gate stack; forming an opening in the interlayer dielectric to expose to the gate stack; forming a glue layer over the interlayer dielectric and in the opening; partially removing the glue layer, in which a portion of the glue layer remain in the opening; and tuning a profile of the remained portion of the glue layer.
Public/Granted literature
- US20180315646A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2018-11-01
Information query
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