Invention Grant
- Patent Title: Method of manufacturing a silicon ingot and silicon ingot
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Application No.: US14535416Application Date: 2014-11-07
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Publication No.: US10337117B2Publication Date: 2019-07-02
- Inventor: Nico Caspary , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: C01B33/00
- IPC: C01B33/00 ; C30B15/04 ; C30B29/06 ; C01B33/02
Abstract:
A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon during an extraction time period. The silicon ingot is doped with additional n-type dopant material during at least one sub-period of the extraction time period.
Public/Granted literature
- US20160130722A1 METHOD OF MANUFACTURING A SILICON INGOT AND SILICON INGOT Public/Granted day:2016-05-12
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