Invention Grant
- Patent Title: Light source for lithography exposure process
-
Application No.: US16045811Application Date: 2018-07-26
-
Publication No.: US10338475B2Publication Date: 2019-07-02
- Inventor: Hsin-Feng Chen , Han-Lung Chang , Li-Jui Chen , Bo-Tsun Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H05G2/00

Abstract:
A method for generating a radiation light in a lithography exposure system is provided. The method includes connecting a first nozzle assembly coupled to a support to an outlet of a storage member that receives a target fuel inside. The method further includes guiding the target fuel flowing through the first nozzle assembly and supplying a droplet of the target fuel into an excitation zone via the first nozzle assembly. The method also includes moving the support to connect a second nozzle assembly coupled to the support with the outlet. In addition, the method includes guiding the target fuel flowing through the second nozzle assembly and supplying a droplet of the target fuel into the excitation zone via the second nozzle assembly. The method further includes irradiating the droplet of the target fuel in the excitation zone with a laser pulse.
Public/Granted literature
- US20190155157A1 LIGHT SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS Public/Granted day:2019-05-23
Information query
IPC分类: