Interconnect structure including air gap

Invention Grant

US10340181B2 Interconnect structure including air gap 有权

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Patent Title: Interconnect structure including air gap
Application No.: US15353850

Application Date: 2016-11-17
Publication No.: US10340181B2

Publication Date: 2019-07-02
Inventor: Tai-I Yang , Wei-Chen Chu , Hsin-Ping Chen , Chih-Wei Lu , Chung-Ju Lee
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Applicant Address: TW Hsinchu
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Current Assignee Address: TW Hsinchu
Agency: McClure, Qualey & Rodack, LLP
Main IPC: H01L21/768
IPC: H01L21/768 ; H01L23/528

Interconnect structure including air gap

Abstract:

A method of forming a semiconductor structure is provided. A conductive layer is formed over a substrate. The conductive layer is selectively etched to form a first conductive portion, a second conductive portion, and a spacing between the first conductive portion and the second conductive portion. A dielectric layer is formed over the first conductive portion, the second conductive portion, and the spacing, such that an air gap is formed in the spacing between the first and second conductive portions and is sealed by the dielectric layer.

Public/Granted literature

US20180138076A1 INTERCONNECT STRUCTURE INCLUDING AIR GAP Public/Granted day:2018-05-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/768	...利用互连在器件中的分离元件间传输电流