A method for producing a semiconductor device includes depositing a first oxide insulating film containing an impurity of a first conductivity type on a fourth first-conductivity-type semiconductor layer formed on a substrate; depositing a sixth insulating nitride film; depositing a second oxide insulating film containing an impurity of the first conductivity type; depositing a seventh insulating nitride film; depositing a third oxide insulating film containing an impurity of the first conductivity type; etching the first insulating film, the sixth insulating film, the second insulating film, and the seventh insulating film to form a contact hole; forming a first pillar-shaped silicon layer in the contact hole by epitaxial growth; removing the sixth insulating film and the seventh insulating film; forming a first gate and a second gate; and forming a contact connecting the first gate and the second gate.