The disclosed technology generally relates to manufacturing of semiconductor devices, and more particularly to manufacturing of a semiconductor device by transferring an active layer from a donor substrate. One aspect is a method of manufacturing a semiconductor device includes providing a donor wafer for transferring an active layer, comprising a group IV, a group III-IV or a group II-VI semiconductor material, to a handling wafer. The method includes forming the active layer on a sacrificial layer of the donor wafer, bonding the donor wafer to the handling wafer, and selectively etching the sacrificial layer to remove the donor wafer from the handling wafer, thereby leaving the active layer on the handling wafer.