Invention Grant
- Patent Title: Method to co-integrate SiGe and Si channels for finFET devices
-
Application No.: US15813071Application Date: 2017-11-14
-
Publication No.: US10340195B2Publication Date: 2019-07-02
- Inventor: Nicolas Loubet , Prasanna Khare , Qing Liu
- Applicant: STMICROELECTRONICS, INC.
- Applicant Address: US TX Coppell
- Assignee: STMICROELECTRONICS, INC.
- Current Assignee: STMICROELECTRONICS, INC.
- Current Assignee Address: US TX Coppell
- Agency: Seed IP Law Group LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L21/3065 ; H01L21/308
Abstract:
A method for co-integrating finFETs of two semiconductor material types, e.g., Si and SiGe, on a bulk substrate is described. Fins for finFETs may be formed in an epitaxial layer of a first semiconductor type, and covered with an insulator. A portion of the fins may be removed to form voids in the insulator, and the voids may be filled by epitaxially growing a semiconductor material of a second type in the voids. The co-integrated finFETs may be formed at a same device level.
Public/Granted literature
- US20180068902A1 METHOD TO CO-INTEGRATE SiGe AND Si CHANNELS FOR FINFET DEVICES Public/Granted day:2018-03-08
Information query
IPC分类:
