Invention Grant
- Patent Title: Method for producing on the same transistors substrate having different characteristics
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Application No.: US15599944Application Date: 2017-05-19
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Publication No.: US10347545B2Publication Date: 2019-07-09
- Inventor: Laurent Grenouillet , Sebastien Barnola , Marie-Anne Jaud , Jerome Mazurier , Nicolas Posseme
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIOUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIOUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1654554 20160520
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/84 ; H01L27/12 ; H01L29/423 ; H01L29/49 ; H01L29/78 ; H01L29/66
Abstract:
There is provided a method for producing on a same substrate at least one first transistor and at least one second transistor that have different characteristics, the method including producing at least one first gate pattern and at least one second gate pattern on the substrate; depositing, on the first and the second gate patterns, at least: a first protective layer, and a second protective layer overlying the first protective layer and made of a material different from that of the first protective layer; masking of the second gate pattern by a masking layer; isotropic etching of the second protective layer; removing the masking layer; and anisotropic etching of the second protective layer selectively relative to the first protective layer.
Public/Granted literature
- US20170358502A1 METHOD FOR PRODUCING ON THE SAME TRANSISTORS SUBSTRATE HAVING DIFFERENT CHARACTERISTICS Public/Granted day:2017-12-14
Information query
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