Invention Grant
- Patent Title: Manufacturing method of semiconductor memory device
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Application No.: US15856024Application Date: 2017-12-27
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Publication No.: US10347642B2Publication Date: 2019-07-09
- Inventor: Feng-Yi Chang , Chien-Ting Ho , Shih-Fang Tzou , Fu-Che Lee
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201611252222 20161230
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L29/78 ; H01L21/28 ; H01L27/108 ; H01L21/02
Abstract:
A manufacturing method of a semiconductor memory device is provided in the present invention. A cleaning treatment to a storage node contact on a semiconductor substrate is performed, and a metal silicide layer is formed after the cleaning treatment. A gate contact opening penetrating a capping layer of a transistor on the semiconductor substrate is formed after the step of forming the metal silicide layer for exposing a gate structure of the transistor. By the manufacturing method of the semiconductor memory device in the present invention, the gate structure of the transistor may be kept from being influenced and/or damaged by the cleaning treatment of the storage node contact, and the electrical performance of the transistor may be ensured accordingly.
Public/Granted literature
- US20180190659A1 MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2018-07-05
Information query
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