Invention Grant
- Patent Title: Image sensor
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Application No.: US15848733Application Date: 2017-12-20
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Publication No.: US10347684B2Publication Date: 2019-07-09
- Inventor: Honglae Park , Jaeho Kim , Hyoshin Ahn , Inkook Jang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2016-0181325 20161228
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L27/146 ; H01L31/0248 ; H04N5/361

Abstract:
An image sensor includes a substrate including a photoelectric conversion part therein, and a fixed charge layer provided above the substrate. The fixed charge layer includes a first metal oxide and a second metal oxide, which are different from each other. The first metal oxide includes a first metal, and the second metal oxide includes a second metal different from the first metal. Concentration of the first metal in the fixed charge layer progressively increases from an upper portion of the fixed charge layer to a lower portion of the fixed charge layer.
Public/Granted literature
- US20180182805A1 IMAGE SENSOR Public/Granted day:2018-06-28
Information query
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