- 专利标题: Light emitting diode package structure with large luminous intensity in particular directions and manufacturing method thereof
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申请号: US15378272申请日: 2016-12-14
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公开(公告)号: US10347795B2公开(公告)日: 2019-07-09
- 发明人: Yu-Hsuan Chen , Ming-Kuei Wu
- 申请人: Everlight Electronics Co., Ltd.
- 申请人地址: TW New Taipei
- 专利权人: Everlight Electronics Co., Ltd.
- 当前专利权人: Everlight Electronics Co., Ltd.
- 当前专利权人地址: TW New Taipei
- 代理机构: Chen Yoshimura LLP
- 优先权: TW104141914A 20151214
- 主分类号: H01L33/44
- IPC分类号: H01L33/44 ; H01L33/48 ; H01L33/54 ; H01L33/58
摘要:
A light emitting diode package structure including a base, a light emitting diode and an encapsulant is provided. The light emitting diode is disposed on a surface of the base and is adapted to generate and emit a light. The encapsulant is disposed on the base and encapsulates the light emitting diode. The encapsulant has a surface parallel to the surface of the base and a plurality of surfaces perpendicular to the surface of the base. The light, after passing through the surface of the encapsulant parallel to the surface of the base, has a first light intensity. The light, after passing through the surfaces of the encapsulant perpendicular to the surface of the base, has a second light intensity. The first light intensity is greater than the second light intensity. In addition, a manufacturing method of a light emitting diode package structure is also provided.
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