Invention Grant
- Patent Title: Ferroelectric memory cells
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Application No.: US16104709Application Date: 2018-08-17
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Publication No.: US10354712B2Publication Date: 2019-07-16
- Inventor: Scott J. Derner , Christopher J. Kawamura
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C11/22
- IPC: G11C11/22 ; H01L27/11502 ; H01L49/02 ; H01L27/11507 ; H01L27/11514

Abstract:
Apparatuses and methods are disclosed that include ferroelectric memory cells. An example ferroelectric memory cell includes two transistors and two capacitors. Another example ferroelectric memory cell includes three transistors and two capacitors. Another example ferroelectric memory cell includes four transistors and two capacitors.
Public/Granted literature
- US20190005999A1 FERROELECTRIC MEMORY CELLS Public/Granted day:2019-01-03
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