Invention Grant
- Patent Title: Low temperature molecular layer deposition of SiCON
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Application No.: US15804503Application Date: 2017-11-06
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Publication No.: US10354861B2Publication Date: 2019-07-16
- Inventor: Mark Saly , David Thompson , Lakmal C. Kalutarage
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/30
- IPC: C23C16/30 ; H01L21/02 ; C23C16/56 ; C23C16/455
Abstract:
Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.
Public/Granted literature
- US20180061629A1 Low Temperature Molecular Layer Deposition Of SiCON Public/Granted day:2018-03-01
Information query
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