公开(公告)号：US20240087881A1

公开(公告)日：2024-03-14

申请号：US17896753

申请日：2022-08-26

申请人： Applied Materials, Inc.

发明人： Michael Haverty ,  Shruba Gangopadhyay ,  Bo Xie ,  Yijun Liu ,  Ruitong Xiong ,  Rui Lu ,  Xiaobo Li ,  Li-Qun Xia ,  Lakmal C. Kalutarage ,  Lauren Bagby

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/02208 ,  H01L21/02216 ,  H01L21/02274 ,  H01J2237/332 ,  H01L21/02348

摘要： Embodiments include semiconductor processing methods to form low-K films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system, wherein the one or more deposition precursors include a silicon-containing precursor. The silicon-containing precursor may include a carbon chain. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

公开(公告)号：US20220384176A1

公开(公告)日：2022-12-01

申请号：US17873793

申请日：2022-07-26

申请人： Applied Materials, Inc.

发明人： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Joseph Knisley

IPC分类号： H01L21/02 ,  C23C16/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/311

摘要： Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.

公开(公告)号：US11417515B2

公开(公告)日：2022-08-16

申请号：US16632164

申请日：2018-07-17

申请人： Applied Materials, Inc.

发明人： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Knisley

IPC分类号： H01L21/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/311

摘要： Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.

公开(公告)号：US20220076960A1

公开(公告)日：2022-03-10

申请号：US17014251

申请日：2020-09-08

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC分类号： H01L21/311 ,  H01L21/02

摘要： Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.

公开(公告)号：US20180061629A1

公开(公告)日：2018-03-01

申请号：US15804503

申请日：2017-11-06

申请人： Applied Materials, Inc.

发明人： Mark Saly ,  David Thompson ,  Lakmal C. Kalutarage

IPC分类号： H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02126

摘要： Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

公开(公告)号：US20180025907A1

公开(公告)日：2018-01-25

申请号：US15654185

申请日：2017-07-19

申请人： Applied Materials, Inc.

发明人： Lakmal C. Kalutarage ,  Mark Saly ,  David Thompson ,  Abhijit Basu Mallick ,  Tejasvi Ashok ,  Pramit Manna

IPC分类号： H01L21/02 ,  H01L21/762

CPC分类号： H01L21/02274 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76224

摘要： Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.

公开(公告)号：US12018363B2

公开(公告)日：2024-06-25

申请号：US16577220

申请日：2019-09-20

申请人： Applied Materials, Inc.

发明人： Mark Saly ,  Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Tatsuya E. Sato

IPC分类号： C23C16/30 ,  C23C16/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  C23F1/44 ,  H01L21/02 ,  H01L21/762 ,  H01L21/768

CPC分类号： C23C16/303 ,  C23C16/32 ,  C23C16/56 ,  C23F1/44 ,  H01L21/02274 ,  H01L21/76224 ,  H01L21/76837 ,  C23C16/45536 ,  C23C16/50

摘要： Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US11942330B2

公开(公告)日：2024-03-26

申请号：US17836694

申请日：2022-06-09

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31122 ,  H01L21/02175

摘要： Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.

公开(公告)号：US11702733B2

公开(公告)日：2023-07-18

申请号：US17315223

申请日：2021-05-07

申请人： Applied Materials, Inc.

发明人： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC分类号： C23C16/04 ,  C23C16/02 ,  H01L21/02 ,  H01L21/32 ,  C23C16/56

CPC分类号： C23C16/042 ,  C23C16/0272 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/02172 ,  H01L21/32 ,  H01L21/0217 ,  H01L21/02211

摘要： Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US20200095674A1

公开(公告)日：2020-03-26

申请号：US16577220

申请日：2019-09-20

申请人： Applied Materials, Inc.

发明人： Mark Saly ,  Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Tatsuya E. Sato

IPC分类号： C23C16/30 ,  H01L21/762 ,  H01L21/768 ,  H01L21/02 ,  C23C16/32 ,  C23C16/56 ,  C23F1/44

摘要： Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.