Invention Grant
- Patent Title: Doping method for semiconductor device
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Application No.: US15402970Application Date: 2017-01-10
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Publication No.: US10354878B2Publication Date: 2019-07-16
- Inventor: Kai-Kuen Chang , Shih-Yin Hsiao
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/265 ; H01L21/266 ; H01L27/11556 ; H01L27/11582

Abstract:
A doping method for a semiconductor device including the following steps is provided. A substrate is provided. The substrate has a channel region. The channel region includes a first edge region, a second edge region and a center region in a channel width direction substantially perpendicular to a channel length direction, and the center region is located between the first edge region and the second edge region. A first doping process is performed on the first edge region, the second edge region and the center region by using a first conductive type dopant. A second doping process is performed on the center region by using a second conductive type dopant.
Public/Granted literature
- US20180197742A1 DOPING METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2018-07-12
Information query
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