Invention Grant
- Patent Title: Silicon on nothing devices and methods of formation thereof
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Application No.: US15630579Application Date: 2017-06-22
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Publication No.: US10354911B2Publication Date: 2019-07-16
- Inventor: Thoralf Kautzsch , Alessia Scire , Steffen Bieselt
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE Dresden
- Assignee: INFINEON TECHNOLOGIES DRESDEN GMBH
- Current Assignee: INFINEON TECHNOLOGIES DRESDEN GMBH
- Current Assignee Address: DE Dresden
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/764
- IPC: H01L21/764 ; H01L21/762 ; H01L27/12 ; H01L21/324 ; H01L29/78 ; H01L29/06 ; B81C1/00
Abstract:
In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate.
Public/Granted literature
- US20170287772A1 Silicon on Nothing Devices and Methods of Formation Thereof Public/Granted day:2017-10-05
Information query
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