Invention Grant
- Patent Title: Semiconductor device including at least one lateral IGFET and at least one vertical IGFET and corresponding manufacturing method
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Application No.: US15278164Application Date: 2016-09-28
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Publication No.: US10354925B2Publication Date: 2019-07-16
- Inventor: Thorsten Meyer , Werner Schwetlick
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L29/423 ; H01L21/28 ; H01L29/78 ; H01L29/40 ; H01L21/8238
Abstract:
A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface, first trenches and second trenches extending from the first surface into the semiconductor body, at least one lateral IGFET including a first load terminal at the first surface, a second load terminal at the first surface and a gate electrode within the first trenches, and at least one vertical IGFET including a first load terminal at the first surface, a second load terminal at the second surface and a gate electrode within the second trenches. The first trenches extend from the first surface into the semiconductor body deeper than a channel zone of the lateral IGFET and confine the channel zone.
Public/Granted literature
Information query
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